MUN5230DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi MUN5230DW1T1 is a dual, pre-biased NPN bipolar junction transistor array packaged in a SOT-363 (SC-88/SC70-6) surface mount configuration. This component features integrated base resistors, specified as 1 kOhm for both R1 and R2, simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current capability of 100mA, with a power dissipation rating of 250mW. The device exhibits a minimum DC current gain (hFE) of 3 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV for a base current of 5mA and collector current of 10mA. Applications for this transistor array include logic level shifting and digital interface circuits within the industrial and consumer electronics sectors. The part is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 1kOhms |
| Resistor - Emitter Base (R2) | 1kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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