MUN5216DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5216DW1T1 is a dual NPN pre-biased bipolar transistor array in a SOT-363 package. Designed for surface mount applications, this component offers a collector current of up to 100mA and a maximum power dissipation of 250mW. Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The integrated base resistor (R1) is 4.7kOhms. This device is suitable for use in various industrial and consumer electronics applications requiring simplified logic and signal amplification circuits. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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