MUN5213DW1T1
TRANS BRT NPN DUAL 50V SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5213DW1T1 is a dual NPN pre-biased bipolar transistor (BJT) designed for surface mount applications within the SC-88/SC70-6/SOT-363 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation rating of 250mW. Each transistor incorporates integrated base resistors (R1) of 47kOhms and emitter base resistors (R2) of 47kOhms for simplified circuit design. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce, and a saturation voltage (Vce Sat) of 250mV at 300µA base current and 10mA collector current. It is utilized in applications requiring simplified switching and amplification stages, commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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