MUN5212DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5212DW1T1 is a dual NPN pre-biased bipolar transistor array designed for surface mount applications. This component features integrated base resistors (R1=22kO, R2=22kO) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device dissipates a maximum power of 250mW and exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce. Saturation voltage is specified at 250mV for 300µA base current and 10mA collector current. The MUN5212DW1T1 is supplied in a compact SC-88/SC70-6/SOT-363 package, commonly utilized in portable electronics, sensor interfaces, and general-purpose amplification circuits due to its space-saving design and simplified biasing.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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