MUN5211DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5211DW1T1 is a dual NPN pre-biased bipolar transistor array designed for surface mount applications. This component features integrated base resistors, simplifying circuit design by eliminating the need for external biasing components. Each transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 250mW. The guaranteed DC current gain (hFE) is a minimum of 35 at 5mA and 10V. Saturation voltage is specified at 250mV maximum for 300µA base current and 10mA collector current. The internal base resistors are configured as 10kOhms for both R1 and R2. Supplied in a compact SC-88/SC70-6/SOT-363 package, the MUN5211DW1T1 is suitable for use in consumer electronics and industrial control systems. This device is provided in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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