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MUN5137DW1T1

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MUN5137DW1T1

TRANS 2PNP PREBIAS 0.25W SOT363

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The onsemi MUN5137DW1T1 is a pre-biased dual PNP bipolar transistor array designed for surface mounting in a SOT-363 package. This component features two PNP transistors with integrated base resistors, simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV at 5mA base current and 10mA collector current. The internal base resistors are configured as R1 = 47kOhms and R2 = 22kOhms. This device is suitable for applications in portable electronics, industrial control, and communication systems where space and power efficiency are critical. The MUN5137DW1T1 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackageSC-88/SC70-6/SOT-363
Grade-
Qualification-

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