MUN5136DW1T1
TRANS 2PNP PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi MUN5136DW1T1 is a dual, pre-biased PNP bipolar junction transistor (BJT) in a SOT-363 package. This device integrates two PNP transistors with integrated base resistors, simplifying circuit design and reducing component count. Each transistor offers a collector-emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. With a maximum power dissipation of 250mW, it is suitable for various low-power applications. The device features a typical DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The integrated base resistors are specified at 100kOhms for both R1 and R2. Saturation voltage (Vce Sat) is 250mV at 300µA base current and 10mA collector current. This component finds application in areas such as digital logic level shifting, low-power switching, and general-purpose amplification in consumer electronics and industrial control systems. The MUN5136DW1T1 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 100kOhms |
| Resistor - Emitter Base (R2) | 100kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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