MUN5135DW1T1
TRANS 2PNP PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5135DW1T1 is a dual PNP pre-biased bipolar transistor in a SOT-363 package. This surface mount component features a collector current capability of 100mA and a maximum power dissipation of 250mW. It includes integrated base resistors, specified as 2.2kOhms for R1 and 47kOhms for R2, simplifying circuit design and reducing component count. The device exhibits a Vce(sat) of 250mV at an Ic of 10mA and an Ib of 300µA. Its collector emitter breakdown voltage is rated at 50V, with a collector cutoff current of 500nA. The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V Vce. This component is commonly utilized in consumer electronics and industrial control applications requiring simplified driver circuits. It is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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