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MUN5133DW1T1

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MUN5133DW1T1

TRANS BRT PNP DUAL 50V SOT-363

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The onsemi MUN5133DW1T1 is a dual PNP pre-biased bipolar transistor in a SOT-363 package. This component features integrated base resistors, specified as 4.7 kOhms (R1) and 47 kOhms (R2), simplifying circuit design. It offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV for 1mA base current and 10mA collector current. The maximum power dissipation is 385mW. This component is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max385mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageSC-88/SC70-6/SOT-363
Grade-
Qualification-

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