MUN5116DW1T1
TRANS 2PNP PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5116DW1T1 is a dual pre-biased PNP bipolar transistor array housed in a compact SOT-363 package. This surface-mount component features integrated base resistors, simplifying circuit design and reducing component count. It offers a collector current capability of 100mA with a breakdown voltage of 50V. The device exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage is specified at a maximum of 250mV when operating at 1mA base current and 10mA collector current. With a maximum power dissipation of 250mW, this transistor array is suitable for applications in consumer electronics, industrial control, and communication systems where space and simplified assembly are critical. The component is supplied on a tape and reel for automated manufacturing processes.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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