MUN5114DW1T1
TRANS 2PNP PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi MUN5114DW1T1 is a dual, pre-biased PNP bipolar junction transistor (BJT) packaged in an SC-88/SC70-6/SOT-363 surface-mount configuration. This component features integrated base resistors (R1: 10kO, R2: 47kO), simplifying circuit design and reducing component count. It offers a collector current capability of up to 100mA and a collector-emitter breakdown voltage of 50V. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. With a maximum power dissipation of 250mW, this transistor array is suitable for applications in consumer electronics, industrial automation, and telecommunications where simplified biasing and reduced component count are critical. The MUN5114DW1T1 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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