EMG2DXV5T5G
TRANS PREBIAS 2NPN 50V SOT553Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi EMG2DXV5T5G is a dual NPN pre-biased bipolar transistor in a SOT-553 surface mount package. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Featuring integrated base resistors of 47kOhms (R1) and 47kOhms (R2), it simplifies circuit design for applications requiring consistent bias conditions. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. With a maximum power dissipation of 230mW, it is suitable for use in portable electronics and other space-constrained designs. The device is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-553 |
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