EMG2DXV5T5
TRANS 2NPN PREBIAS 0.23W SOT553Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMG2DXV5T5 is a dual NPN pre-biased bipolar transistor array in a SOT-553 surface mount package. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a power dissipation of 230mW, it features integrated base resistors of 47kOhms (R1) and emitter base resistors of 47kOhms (R2). The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V Vce. Saturation voltage is specified at 250mV at 300µA base current and 10mA collector current. This device is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-553 |
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