EMG2DXV5T1
TRANS 2NPN PREBIAS 0.23W SOT553Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMG2DXV5T1 is a pre-biased bipolar transistor array featuring two NPN transistors in a single SOT-553 surface mount package. This dual transistor configuration offers a collector current (Ic) capability of up to 100mA and a collector-emitter breakdown voltage (Vce) of 50V. Each transistor incorporates integrated base resistors (R1 and R2) of 47kOhms, simplifying bias network design and reducing component count. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce, with a Vce saturation of 250mV at 300µA base current and 10mA collector current. The maximum power dissipation is rated at 230mW. This component is commonly utilized in applications such as digital logic level shifting, general-purpose switching, and signal amplification within the automotive and industrial electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-553 |
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