EMF5XV6T5G
TRANS PREBIAS 1NPN 1PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMF5XV6T5G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-563 package. This device offers 50V collector-emitter breakdown voltage for the NPN and 12V for the PNP. The NPN transistor provides a collector current of up to 100mA with a saturation voltage of 250mV at 300µA base current and 10mA collector current. The PNP transistor supports up to 500mA collector current with a saturation voltage of 250mV at 10mA base current and 200mA collector current. Minimum DC current gain (hFE) is specified at 80 @ 5mA, 10V for the NPN and 270 @ 10mA, 2V for the PNP. Each transistor includes internal base resistors of 47kOhms for simplified biasing. The device has a maximum power dissipation of 500mW and is supplied on tape and reel. This component finds application in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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