EMF5XV6T5
TRANS NPN PREBIAS/PNP 0.5W SOT56Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMF5XV6T5 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This device offers a collector-emitter breakdown voltage of 50V for the NPN and 12V for the PNP. Collector current capabilities are 100mA for the NPN and 500mA for the PNP, with a maximum power dissipation of 500mW. The NPN transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA, 10V, and 270 at 10mA, 2V. Built-in bias resistors of 47kOhms are present for both base and emitter-base connections. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA, 10mA for the NPN and 250mV at 10mA, 200mA for the PNP. The EMF5X V6T5 is supplied in a SOT-563 surface-mount package and is available on tape and reel. This component is commonly utilized in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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