EMF18XV6T5G
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMF18XV6T5G is a pre-biased bipolar transistor featuring one NPN and one PNP element within a compact SOT-563 package. This device offers collector-emitter breakdown voltages of 50V for the NPN and 60V for the PNP. It supports a maximum collector current of 100mA and a transition frequency of 140MHz, with a power dissipation rating of 500mW. Internal base resistors of 47kOhms are integrated for simplified biasing. Key DC current gain (hFE) specifications are 80 minimum at 5mA, 10V for the NPN and 120 minimum at 1mA, 6V for the PNP. Typical applications include digital logic circuits and general-purpose amplification in consumer electronics and industrial control systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 120 @ 1mA, 6V |
| Frequency - Transition | 140MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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