EMD5DXV6T1G
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMD5DXV6T1G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This dual transistor configuration is housed in a compact SOT-563 surface mount package, with the supplier device package also specified as SOT-563. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device includes integrated base resistors (R1) of 4.7kOhms and 10kOhms for the NPN and PNP sections respectively, along with emitter-base resistors (R2) of 47kOhms and 47kOhms. The minimum DC current gain (hFE) is 80 at 5mA, 10V for the NPN and 20 at 5mA, 10V for the PNP. With a maximum power dissipation of 500mW, this component is suitable for applications requiring simplified biasing and reduced component count, commonly found in consumer electronics and industrial control systems. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 20 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms, 47kOhms |
| Resistor - Emitter Base (R2) | 10kOhms, 47kOhms |
| Supplier Device Package | SOT-563 |
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