EMD5DXV6T1
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi EMD5DXV6T1 is a dual pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a SOT-563 package. This device is rated for a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 500mW. Internal base resistors are 4.7kO for the NPN and 10kO for the PNP, with emitter base resistors of 47kO and 47kO respectively. The minimum DC current gain (hFE) is 80 for the NPN and 20 for the PNP at 5mA, 10V. Vce saturation is a maximum of 250mV at 300µA, 10mA. The EMD5DXV6T1 is supplied on tape and reel and is commonly utilized in industrial, automotive, and consumer electronics applications requiring simplified transistor switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 20 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms, 47kOhms |
| Resistor - Emitter Base (R2) | 10kOhms, 47kOhms |
| Supplier Device Package | SOT-563 |
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