EMD4DXV6T5G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi EMD4DXV6T5G is a dual pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a single SOT-563 package. This component is designed for surface mount applications and operates at a collector-emitter breakdown voltage of 50V. With a maximum collector current (Ic) of 100mA and a power dissipation of 500mW, it offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The integrated base resistors are specified as 47kOhms and 10kOhms for R1, and 47kOhms for R2. Saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The EMD4DXV6T5G is commonly utilized in applications within the consumer electronics and industrial sectors. It is supplied on tape and reel for efficient manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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