EMC5DXV5T1
TRANS PREBIAS NPN/PNP SOT553Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi EMC5DXV5T1 is a dual pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a compact SOT-553 surface mount package. This component is designed for applications requiring simplified circuit design with integrated base resistors, offering 47kO/47kO and 4.7kO/10kO configurations. It supports a collector current of up to 100mA and a collector-emitter breakdown voltage of 50V, with a maximum power dissipation of 500mW. DC current gain (hFE) is specified at a minimum of 80 for the NPN and 20 for the PNP at 5mA, 10V. Saturation voltage (Vce) is a maximum of 250mV at 300µA/10mA. Applications include logic level shifting and general-purpose amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 20 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms, 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms, 10kOhms |
| Supplier Device Package | SOT-553 |
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