EMC4DXV5T1G
TRANS PREBIAS NPN/PNP 50V SOT553Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMC4DXV5T1G is a dual pre-biased bipolar transistor featuring one NPN and one PNP element in a compact SOT-553 surface mount package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a maximum power dissipation of 500mW. Internal base resistors are configured as 47kOhms for R1 and 47kOhms for R2. The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is specified at a maximum of 250mV at 300µA base current and 10mA collector current. This component is commonly utilized in industrial automation, consumer electronics, and networking equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-553 |
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