EMA6DXV5T5G
TRANS 2PNP PREBIAS 0.23W SOT553Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMA6DXV5T5G is a dual, pre-biased PNP bipolar junction transistor (BJT) housed in a compact SOT-553 surface mount package. This component features a collector current capability of 100mA and a collector-emitter breakdown voltage of 50V. It offers a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The integrated base resistor has a value of 47kOhms, simplifying circuit design by eliminating the need for external biasing components. With a maximum power dissipation of 230mW, the EMA6DXV5T5G is suitable for applications in consumer electronics and industrial control systems requiring compact, pre-biased transistor solutions.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-553 |
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