EMA6DXV5T1G
TRANS 2PNP PREBIAS 0.23W SOT553Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi EMA6DXV5T1G is a dual, pre-biased PNP bipolar transistor in a SOT-553 surface mount package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The saturation voltage (Vce(sat)) is a maximum of 250mV at 1mA base current and 10mA collector current. A built-in base resistor of 47kOhms is integrated. This device is suitable for applications requiring low power consumption, with a maximum power dissipation of 230mW. It is supplied on tape and reel for automated assembly. This transistor array is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-553 |