EMA6DXV5T1
TRANS 2PNP PREBIAS 0.23W SOT553Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
onsemi EMA6DXV5T1 is a pre-biased bipolar transistor featuring two PNP configurations in a single SOT-553 package. This dual-PNP device offers a breakdown voltage of 50V and a maximum collector current of 100mA. With a power dissipation of 230mW, it includes an integrated base resistor of 47 kOhms, facilitating simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV at 1mA base current and 10mA collector current. The EMA6DXV5T1 is supplied in a Tape & Reel (TR) package. This component is commonly utilized in applications such as consumer electronics and general-purpose switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-553 |
Request a Quote
Clients Also Buy
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
NSBC114EPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
NSVBC143TPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
