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SS9018HBU

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SS9018HBU

RF TRANS NPN 15V 1.1GHZ TO92-3

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi SS9018HBU NPN RF Transistor, designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 50mA. With a transition frequency of 1.1GHz, it is suitable for RF amplifier and switching circuits. The device offers a minimum DC current gain (hFE) of 97 at 1mA and 5V. Rated for a maximum power dissipation of 400mW, it operates across a wide temperature range up to 150°C (TJ). The SS9018HBU is packaged in a TO-92-3 through-hole configuration, commonly utilized in consumer electronics and telecommunications equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max400mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce97 @ 1mA, 5V
Frequency - Transition1.1GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageTO-92-3

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