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NSVF6003SB6T1G

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NSVF6003SB6T1G

RF TRANS NPN 12V 7GHZ 6CPH

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

The onsemi NSVF6003SB6T1G is an NPN bipolar RF transistor designed for high-frequency applications. This AEC-Q101 qualified component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 150mA. It exhibits a transition frequency of 7GHz and a typical gain of 9dB. The low noise figure of 3dB at 1GHz makes it suitable for sensitive RF front-end stages. With a maximum power dissipation of 800mW and an operating temperature range of -55°C to 150°C, it is optimized for surface mount applications, specifically in the automotive industry. The device is supplied in a 6-CPH package, presented on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 9 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Gain9dB
Power - Max800mW
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 5V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)3dB @ 1GHz
Supplier Device Package6-CPH
GradeAutomotive
QualificationAEC-Q101

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