NSVF6001SB6T1G
RF TRANS NPN 0.1A 12V MCPH6Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi NSVF6001SB6T1G is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA, this device boasts a transition frequency of 6.7GHz. With a typical gain of 11dB and a noise figure of 1.1dB at 1GHz, it is suitable for demanding RF circuitry. The transistor operates within an extended temperature range of -55°C to 150°C and is qualified to AEC-Q101 standards, making it ideal for automotive applications. Supplied in a 6-CPH package (SOT-23-6 Thin, TSOT-23-6) on tape and reel, the NSVF6001SB6T1G supports surface mount assembly and delivers a maximum power dissipation of 800mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | 11dB |
| Power - Max | 800mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 30mA, 5V |
| Frequency - Transition | 6.7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | 6-CPH |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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