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NSVF3007SG3T1G

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NSVF3007SG3T1G

RF TRANS NPN 12V 8GHZ 3MCPH

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi NSVF3007SG3T1G is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 12V and a maximum collector current of 30mA, this device offers a transition frequency of 8GHz. It delivers a typical gain of 12dB and a noise figure of 1.8dB at 1GHz. The transistor is specified with a minimum DC current gain (hFE) of 60 at 5mA and 5V, and a maximum power dissipation of 350mW. Qualified to AEC-Q101 standards and manufactured with automotive grade, the NSVF3007SG3T1G is suitable for demanding automotive and high-reliability electronic systems. It is supplied in an SC-70FL/MCPH3 package for surface mounting and delivered on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Gain12dB
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.8dB @ 1GHz
Supplier Device PackageSC-70FL/MCPH3
GradeAutomotive
QualificationAEC-Q101

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