MSD2714AT1G
RF TRANS NPN 25V 650MHZ SC59Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi MSD2714AT1G is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 25V and a transition frequency of 650MHz, making it suitable for RF amplification and switching circuits. The device offers a minimum DC current gain (hFE) of 90 at 1mA collector current and 6V collector-emitter voltage. With a maximum power dissipation of 225mW, it is packaged in an SC-59 (TO-236-3) surface mount configuration, supplied on tape and reel. The operating temperature range is from -55°C to 150°C. This transistor is commonly utilized in telecommunications and consumer electronics for RF signal processing.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 225mW |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 1mA, 6V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-59 |
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