MPSH17G
RF TRANS NPN 15V 800MHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi MPSH17G is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 15V collector-emitter breakdown voltage and an 800MHz transition frequency. With a typical gain of 24dB and a noise figure of 6dB at 200MHz, it is suitable for amplification stages in RF circuits. The device dissipates a maximum power of 350mW and operates within an extended temperature range of -55°C to 150°C. Packaged in a TO-92 (TO-226) through-hole package, the MPSH17G finds application in telecommunications, wireless infrastructure, and general-purpose RF circuitry. The DC current gain (hFE) is a minimum of 25 at 5mA collector current and 10V collector-emitter voltage.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | 24dB |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 5mA, 10V |
| Frequency - Transition | 800MHz |
| Noise Figure (dB Typ @ f) | 6dB @ 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
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