MPSH10RLRAG
RF TRANS NPN 25V 650MHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi MPSH10RLRAG is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 25V collector-emitter breakdown voltage and a transition frequency of 650MHz. It is rated for a maximum power dissipation of 350mW and offers a minimum DC current gain (hFE) of 60 at 4mA collector current and 10V collector-emitter voltage. The MPSH10RLRAG is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in telecommunications, wireless infrastructure, and general-purpose RF amplification circuits. The part is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-92 (TO-226) |
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