MPSH10G
RF TRANS NPN 25V 650MHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi MPSH10G is an NPN bipolar RF transistor designed for high-frequency applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a collector-emitter breakdown voltage of 25V and a transition frequency of 650MHz. With a maximum power dissipation of 350mW and a minimum DC current gain (hFE) of 60 at 4mA and 10V, it is suitable for RF amplification and switching circuits. The operating temperature range is from -55°C to 150°C. This component finds application in telecommunications and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-92 (TO-226) |
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