MPS5179
RF TRANS NPN 12V 2GHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi MPS5179 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 12V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a transition frequency of 2GHz, it is suitable for RF amplification and switching circuits. The DC current gain (hFE) is a minimum of 25 at 3mA collector current and 1V Vce. The MPS5179 has a maximum power dissipation of 200mW and is packaged in a TO-92 (TO-226) through-hole package. This device is commonly utilized in telecommunications, industrial control, and consumer electronics where robust RF performance is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | - |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V |
| Frequency - Transition | 2GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-92 (TO-226) |
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