MMBTH34
RF TRANS NPN 40V 500MHZ SOT23-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi MMBTH34 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 40V and a maximum collector current of 50mA. With a transition frequency of 500MHz and a power dissipation of 225mW, it is suitable for designs requiring efficient signal amplification in the RF spectrum. The DC current gain (hFE) is a minimum of 15 at 20mA and 2V. Packaged in a SOT-23-3 (TO-236-3, SC-59) surface-mount configuration, it is supplied on tape and reel. This transistor is commonly utilized in telecommunications and general-purpose RF circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 225mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 20mA, 2V |
| Frequency - Transition | 500MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-23-3 |
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