MMBTH10M3T5G
RF TRANS NPN 25V 650MHZ SOT723Manufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi MMBTH10M3T5G is an NPN bipolar RF transistor designed for high-frequency applications. This device boasts a transition frequency of 650MHz and a maximum collector emitter breakdown voltage of 25V. It offers a minimum DC current gain (hFE) of 60 at 4mA collector current and 10V Vce. The transistor has a maximum power dissipation of 265mW and is housed in a compact SOT-723 surface-mount package, supplied on tape and reel. This component is suitable for use in various RF circuits within the telecommunications and industrial electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 265mW |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-723 |
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