MMBTH10-4LT1
RF TRANS NPN 25V 800MHZ SOT23-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi MMBTH10-4LT1 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a transition frequency of 800MHz and a collector-emitter breakdown voltage of 25V, this component is suitable for demanding RF circuitry. The device offers a minimum DC current gain (hFE) of 120 at 4mA and 10V, with a maximum power dissipation of 225mW. Packaged in a surface-mount SOT-23-3 (TO-236) configuration, it is supplied on tape and reel. This transistor finds application in wireless communication systems, radio frequency identification (RFID) readers, and other signal amplification circuits operating in the UHF band. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 225mW |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 4mA, 10V |
| Frequency - Transition | 800MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-23-3 (TO-236) |
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