MMBTH10
RF TRANS NPN 25V 650MHZ SOT23-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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This onsemi NPN RF Transistor, part number MMBTH10, is designed for high-frequency applications. Operating with a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA, it features a transition frequency of 650MHz. The device offers a minimum DC current gain (hFE) of 60 at 4mA and 10V. With a maximum power dissipation of 225mW, this transistor is housed in a SOT-23-3 (TO-236-3, SC-59) surface-mount package. It is suitable for use in various industries including wireless communications and consumer electronics. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 225mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-23-3 |
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