MMBT5770
RF TRANS NPN 15V 600MHZ SOT23-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi MMBT5770 is an NPN bipolar RF transistor designed for high-frequency applications. This device features a collector-emitter breakdown voltage of 15V and a maximum collector current of 10mA. With a transition frequency of 600MHz, it is suitable for RF amplification and switching circuits. The MMBT5770 offers a minimum DC current gain (hFE) of 30 at 3mA, 1V. It is supplied in a SOT-23-3 surface-mount package, delivered on tape and reel. The component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW. This transistor finds application in wireless communication systems and radio frequency circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 225mW |
| Current - Collector (Ic) (Max) | 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Frequency - Transition | 600MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-23-3 |
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