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MCH6001-TL-E

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MCH6001-TL-E

TRANS 2NPN 8V 0.15A 6MCPH

Manufacturer: onsemi

Categories: Bipolar RF Transistors

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The onsemi MCH6001-TL-E is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount component operates at a collector-emitter breakdown voltage of 8V and a maximum collector current of 150mA. It features a transition frequency of 16GHz and provides a typical gain of 16dB. With a maximum power dissipation of 600mW and an operating junction temperature of 150°C, the MCH6001-TL-E is suitable for demanding RF circuitry. Key performance metrics include a minimum DC current gain of 60 at 50mA and 5V, and a typical noise figure of 1.2dB at 1GHz. This device is supplied in a 6-MCPH package, presented on tape and reel. It finds application in telecommunications and wireless infrastructure.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain16dB
Power - Max600mW
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)8V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 50mA, 5V
Frequency - Transition16GHz
Noise Figure (dB Typ @ f)1.2dB @ 1GHz
Supplier Device Package6-MCPH

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