Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

KSC2786OBU

Banner
productimage

KSC2786OBU

RF TRANS NPN 20V 600MHZ TO92S

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

The onsemi KSC2786OBU is an NPN RF bipolar transistor designed for high-frequency applications. Featuring a 20V collector-emitter breakdown voltage and a maximum collector current of 20mA, this device offers a transition frequency of 600MHz. It provides a typical gain range of 18dB to 22dB with a minimum DC current gain (hFE) of 70 at 1mA and 6V. The noise figure is typically between 3dB and 5dB at 100MHz. This component is packaged in a TO-92S (TO-226-3, TO-92-3 Short Body) through-hole configuration, with a maximum power dissipation of 250mW and an operating junction temperature of 150°C. The KSC2786OBU is suitable for use in various RF circuits across industries such as telecommunications and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Short Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain18dB ~ 22dB
Power - Max250mW
Current - Collector (Ic) (Max)20mA
Voltage - Collector Emitter Breakdown (Max)20V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 1mA, 6V
Frequency - Transition600MHz
Noise Figure (dB Typ @ f)3dB ~ 5dB @ 100MHz
Supplier Device PackageTO-92S

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy