KSC1730YTA
RF TRANS NPN 15V 1.1GHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi KSC1730YTA is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 15V collector-emitter breakdown voltage and a transition frequency of 1.1GHz, making it suitable for RF amplification and switching circuits. With a maximum collector current of 50mA and a power dissipation of 250mW, it offers reliable performance in demanding environments. The device exhibits a minimum DC current gain (hFE) of 120 at 5mA and 10V, ensuring consistent signal amplification. Packaged in a TO-92-3 (TO-226AA) through-hole configuration, it is supplied in Tape & Box (TB) packaging. This transistor finds application in consumer electronics and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 10V |
| Frequency - Transition | 1.1GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-92-3 |
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