EC4H09C-TL-H
RF TRANS NPN 3.5V 26GHZ ECSP1008Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi NPN RF Transistor, part number EC4H09C-TL-H, is engineered for high-frequency applications. This device operates with a collector-emitter breakdown voltage of 3.5V and a maximum collector current of 40mA. It boasts a transition frequency of 26GHz and provides a typical gain of 15dB. The EC4H09C-TL-H features a low noise figure of 1.3dB at 2GHz, making it suitable for sensitive RF front-end designs. With a maximum power dissipation of 120mW, it is packaged in a compact 4-ECSP1008 (4-UFDFN) for surface mounting and supplied on tape and reel. This component is commonly utilized in wireless infrastructure, satellite communications, and radar systems. The minimum DC current gain (hFE) is 70 at 5mA, 1V. Its operating junction temperature can reach up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFDFN |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 15dB |
| Power - Max | 120mW |
| Current - Collector (Ic) (Max) | 40mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 1V |
| Frequency - Transition | 26GHz |
| Noise Figure (dB Typ @ f) | 1.3dB @ 2GHz |
| Supplier Device Package | 4-ECSP1008 |
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