EC4H08C-TL-H
RF TRANS NPN 3.5V 24GHZ ECSP1008Manufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi's EC4H08C-TL-H is an NPN bipolar RF transistor designed for high-frequency applications. This component features a transition frequency of 24GHz and a power output of 50mW, with a typical gain of 17dB. The device operates with a collector-emitter breakdown voltage of 3.5V and a maximum collector current of 15mA. Key electrical specifications include a minimum DC current gain (hFE) of 70 at 5mA and 1V, and a noise figure of 1.5dB at 2GHz. The EC4H08C-TL-H is housed in a compact 4-ECSP1008 (4-UFDFN) package, suitable for surface mounting. It supports an operating temperature range up to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging. This transistor is utilized in demanding telecommunications and wireless communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFDFN |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 17dB |
| Power - Max | 50mW |
| Current - Collector (Ic) (Max) | 15mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 1V |
| Frequency - Transition | 24GHz |
| Noise Figure (dB Typ @ f) | 1.5dB @ 2GHz |
| Supplier Device Package | 4-ECSP1008 |
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