EC3H02BA-TL-H
RF TRANS NPN 10V 7GHZ 3-ECSP1006Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi NPN RF Transistor, part number EC3H02BA-TL-H, is engineered for high-frequency applications. This component features a 10V collector-emitter breakdown voltage and a maximum collector current of 70mA. Its transition frequency reaches 7GHz, with a typical gain of 8.5dB at 1GHz. The noise figure is rated at 1dB typical at 1GHz, ensuring excellent signal integrity.
Designed for surface mount installation, the transistor is supplied in a 3-XFDFN package (ECSP1006-3) on tape and reel. It can operate at temperatures up to 150°C (TJ) and has a maximum power dissipation of 100mW. The DC current gain (hFE) is a minimum of 120 at 20mA and 5V. This device is suitable for use in wireless communication systems and other RF circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 8.5dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 20mA, 5V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 1GHz |
| Supplier Device Package | ECSP1006-3 |