BF959RL1G
RF TRANS NPN 20V 700MHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi BF959RL1G is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 20V and a maximum collector current of 100mA. With a transition frequency of 700MHz, it offers robust performance for RF amplification and switching circuits. The BF959RL1G is supplied in a TO-92 (TO-226) package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 20mA and 10V, and a typical noise figure of 3dB at 200MHz. Maximum power dissipation is rated at 625mW. This transistor finds application in various communication systems and wireless infrastructure. It is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 625mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | 700MHz |
| Noise Figure (dB Typ @ f) | 3dB @ 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
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