BF959G
RF TRANS NPN 20V 700MHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi BF959G is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a 20V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a typical transition frequency of 700MHz. It exhibits a minimum DC current gain (hFE) of 40 at 20mA and 10V. The BF959G features a low noise figure, typically 3dB at 200MHz, making it suitable for sensitive RF signal amplification. Packaged in a TO-92 (TO-226) through-hole configuration, this device is rated for a maximum power dissipation of 625mW and operates across a temperature range of -55°C to 150°C. This transistor is commonly utilized in RF amplification and switching circuits within the telecommunications and consumer electronics industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 625mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | 700MHz |
| Noise Figure (dB Typ @ f) | 3dB @ 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
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