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BF494

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BF494

RF TRANS NPN 20V TO92-3

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi BF494 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 20V and a maximum collector current of 30mA, this component offers a power dissipation rating of 350mW. The BF494 exhibits a minimum DC current gain (hFE) of 67 at 1mA and 10V. It is housed in a standard TO-92-3 (TO-226-3, TO-92-3 (TO-226AA)) through-hole package, supplied in bulk. This transistor is suitable for use in various electronic circuits within the telecommunications and consumer electronics industries. The operating junction temperature range is up to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)20V
DC Current Gain (hFE) (Min) @ Ic, Vce67 @ 1mA, 10V
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Supplier Device PackageTO-92-3

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