Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BF494

Banner
productimage

BF494

RF TRANS NPN 20V TO92-3

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi BF494 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 20V and a maximum collector current of 30mA, this component offers a power dissipation rating of 350mW. The BF494 exhibits a minimum DC current gain (hFE) of 67 at 1mA and 10V. It is housed in a standard TO-92-3 (TO-226-3, TO-92-3 (TO-226AA)) through-hole package, supplied in bulk. This transistor is suitable for use in various electronic circuits within the telecommunications and consumer electronics industries. The operating junction temperature range is up to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)20V
DC Current Gain (hFE) (Min) @ Ic, Vce67 @ 1mA, 10V
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Supplier Device PackageTO-92-3

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SS9018HBU

RF TRANS NPN 15V 1.1GHZ TO92-3

product image
2SC6024-TL-E

BIP NPN 35MA 3.5V FT=14G

product image
MPSH10_D75Z

RF TRANS NPN 25V 650MHZ TO92-3