BF199
RF TRANS NPN 25V 1.1GHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi BF199 is an NPN bipolar RF transistor designed for high-frequency applications. This through-hole component, housed in a TO-92-3 package, offers a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA. With a transition frequency of 1.1GHz and a power dissipation of 350mW, the BF199 is suitable for various RF amplification and switching circuits. The DC current gain (hFE) is a minimum of 38 at 7mA and 10V. This device operates across a temperature range of -55°C to 150°C. It finds utility in telecommunications, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 38 @ 7mA, 10V |
| Frequency - Transition | 1.1GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-92-3 |
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