55GN01MA-TL-E
RF TRANS NPN 10V 5.5GHZ 3MCPManufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi NPN RF Transistor, part number 55GN01MA-TL-E, is designed for high-frequency applications. This device features a collector-emitter breakdown voltage of 10V and a maximum collector current of 70mA. It operates across a frequency range of 4.5GHz to 5.5GHz, with a typical gain of 10dB at 1GHz and a noise figure of 1.9dB at 1GHz. The transistor type is NPN, and it provides a minimum DC current gain (hFE) of 100 at 10mA, 5V. With a maximum power dissipation of 400mW, this component is housed in a 3-MCP (SC-70, SOT-323) surface mount package, supplied on tape and reel. Applications include wireless infrastructure and broadband communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10dB @ 1GHz |
| Power - Max | 400mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | 4.5GHz ~ 5.5GHz |
| Noise Figure (dB Typ @ f) | 1.9dB @ 1GHz |
| Supplier Device Package | 3-MCP |